This project aims to study the coupling between two-dimensional (2D) materials and optical angular momentum, and to use the underlying mechanisms to develop orbital angular momentum-based 2D valleytronics with multiple degrees of freedom. This involves a basic experiment on spin and orbital electron transport properties, which is one of the very important directions for developing future electronics. Since many two-dimensional materials, such as transition metal dichalcogenides (TMDs), possess strong spin-orbit coupling, large energy splitting is induced in their valence band and conduction band, enabling external electrons or photons to couple with more energy levels in the material. This is good for the development of future low-power components, which requires access to multiple energy states. Optical angular momentum and 2D TMD coupling was popularly demonstrated through Valleytronics, which utilizes specifically the spin angular momentum (SAM) of light to selectively access one of the two inequivalent, K and K’, valleys along with their respective split states in TMDs. We will involve the other form of optical angular momentum, called the orbital angular momentum (OAM), which is associated with the spatial distribution of light. This study will design and develop a 2D optical angular momentum field effect transistor in which current density is controlled by the unique properties of light with SAM and OAM. Moreover, the possibility of extending the DOF of the device will be tested by introducing applied magnetic field and electric field into the device system. The program wants to recruit a graduated student from India or Vietnam or other countries. The intern will be taught by a mentor and instructions for equipment will be provided by experts in the field. The progress will be supervised in individual and group meetings and the intern will have a network of both national and international students to engage in research and collect nice memories of Taiwan.